We provide comprehensive 2D and 3D TCAD simulation of semiconductor devices across a wide voltage range from 5 V to over 10 kV, covering complex geometries such as trench, planar, Superjunction, vertical, and lateral structures for devices including MOSFETs, IGBTs, RC IGBTs, diodes, and HEMTs. Our expertise spans silicon, wide bandgap materials like SiC and GaN, and ultra wide bandgap materials such as diamond and Ga2O3, using advanced physical models for high accuracy.

We model key fabrication steps to create realistic device structures and deliver detailed analyses of electrical behaviour. Our mixed mode simulations combine physics-based models with circuit elements to replicate system interactions, while advanced electrothermal simulations assess self heating and thermal coupling. We can also conduct reliability analysis for hot carrier degradation, dielectric breakdown, and radiation effects, and extract compact models for SPICE and system-level integration.

These capabilities allow us to assess design feasibility, optimise performance, define fabrication parameters, identify failure modes, and accelerate the development of reliable, efficient semiconductor solutions.

We offer layout designs optimised for performance, area efficiency, and manufacturability, covering voltage classes from low to over 10 kV. Our team has extensive experience in full custom layout for both vertical and lateral power devices, including IGBTs, MOSFETs, diodes, HEMTs, and advanced topologies such as Superjunctions and RC IGBTs. We are also skilled in integrating intelligent sensing, protection, and control functions into power devices, enhancing both their functionality and robustness. With broad experience across many commercial EDA platforms, we deliver high-quality layouts. We also ensure that layout, process flow, and device simulations are seamlessly integrated, providing physical accuracy and strong alignment between the design and its simulated performance.

We perform combined thermal, electrical, and electromagnetic simulations to evaluate the real-world performance of power packages. We have extensive experience with both lateral and vertical device integration in high-voltage power modules. We support the selection of optimal materials, as well as the precise placement and routing of dies, to enhance thermal management, reduce parasitics, and improve overall reliability and performance, all while maintaining a compact form factor.

We offer comprehensive testing and characterisation for both lateral and vertical power devices. Wafer-level testing is available for up to 8-inch wafers using semi-automatic probers, supporting up to 4 kV, 200 A, and temperatures from –50°C to +300°C. We also have the capability to test packaged devices for static characteristics up to 1500 A and 10 kV, as well as dynamic behaviour, such as turn-on and turn-off, using double pulse testing. We perform capacitance (CV) measurements up to 3 kV and 10 MHz to enable accurate junction profiling and oxide integrity analysis. Additionally, we offer small-scale reliability testing such as HTRB, HTGB, and TDDB for early life stress evaluation.