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We have extensive experience in High Voltage semiconductor device development both in research and industrial environments with proven track record in developing ultra-fast IGBTs, advanced Power MOSFETs and Superjunction devices in Si, SiC, GaN and Diamond as well as development and optimisation of HVICs in SOI and BCD technologies.

Our founders and management team have strong ongoing links with Cambridge University where they have started research in the area of High Voltage Power Semiconductors for discrete and integrated solutions more than 20 years ago. Over the years we have worked on various projects with leading IDMs in the field of power electronics and high voltage semiconductor devices and fabless start-ups such as CamSemi, Enecsys and CCMOS. We also have extensive experience working with several world leading foundries where we have well established contacts and ongoing projects.

We offer services to help develop new technologies and scale designs from R&D stage to production with particular emphasis on application driven chip optimisation with high yield and reliable and robust performance. We develop new high voltage technologies from scratch or from existing process modules, transfer High Voltage expertise and generate IP for semiconductor solutions in a wide range of power electronics applications.




Cambridge Microelectronics Ltd. Registered in England and Wales.

Registered address : CPC1 Capital Park, Fulbourn, Cambridge, CB21 5XE, United Kingdom

Registration no : 08096560. VAT no:137858767